igc18 t120 t6 l edited by in fineon technologies , aim pmd d cid cls , l763 3 c , edit ion 1 , 31 .1 0 .200 7 igbt4 low power chip this chip is used for: low / medium power module s features: 1200v trench + field stop technology low switching losses positive temperature coefficient easy paralleling applications: low / medium power drives g c e chip type v ce i cn die size package igc18 t120t6 l 1200v 15 a 4 . 16 x 4.34 mm 2 sawn on foil mechanical parameter raster size 4.16 x 4.34 emitter pad size 2.652 x 2.246 gate pad size 1.185 x 0.702 area total / active 18.1 / 10.3 mm 2 thickness 115 m wafer siz e 150 mm flat po sition 0 gr d max.possible chips per wafer 822 passivation frontside photoimide pad metal 3200 nm alsicu backside metal ni ag ? system suitable for epoxy and soft solder die bonding die bond e lectrically conductive glue or solder wire bond al, <500m reject ink dot s ize ? 0.65mm ; max 1.2mm recommended s torage e nvironment s tore in original container, in dry nitrogen, < 6 month at an ambient temperature of 23c
igc18 t120 t6 l edited by in fineon technologies , aim pmd d cid cls , l763 3 c , edit ion 1 , 31 .1 0 .200 7 maximum ratings parameter symbol value unit collector - e mitter voltage , t j =25 c v ce 1200 v dc collector current, limited by t jmax i c 1 ) a pulsed collector current, t p limited by t jmax i cpuls 45 a gate - e mitter voltage v ge 20 v operating junction temperature t j - 40 ... +175 c short circuit data 2 ) v ge = 15v, v cc = 8 00v, tvj = 150c tp 10 s reverse bias safe operating area 2 ) (rbsoa) i c max = 30 a, v ce max = 1200v, tvj max = 150c 1 ) depending on thermal properties of assembly 2 ) not subject to production test - verified by design/characteriz ation static characteristics (tested on wafer ) , t j =25 c value parameter symbol conditions min. typ. max. unit collector - e mitter breakdown voltage v (br)ces v ge =0v , i c = 0. 5 ma 1200 collector - e mitter saturation voltage v c e(sat) v ge =15v, i c =15 a 1. 6 1.8 5 2. 1 gate - e mitter threshold voltage v ge(th) i c = 0. 5 ma , v ge =v ce 5.0 5.8 6.5 v zero gate voltage collector current i ces v ce =1200v , v ge =0v 2 a gate - e mitter leakage current i ges v ce =0v , v ge =2 0v 120 na integrated gate r esistor r gint - w electrical characteristics ( not subject to production test - verified by design/characterization ) value parameter symbol conditions min. typ. max. unit input capacitance c iss 900 output capacitan ce c oss 80 reverse transfer capacitance c rss v ce =25v, v ge =0v, f=1mhz 55 pf
igc18 t120 t6 l edited by in fineon technologies , aim pmd d cid cls , l763 3 c , edit ion 1 , 31 .1 0 .200 7 switching characteristics i nductive l oad ( not subject to production test - verified by design /characterization ) value parameter symbol conditions 1) min. typ. max. unit turn - on delay tim e t d(on) tbd rise time t r tbd turn - off delay time t d(off) tbd fall time t f t j =125 c v cc =600v, i c =15 a, v ge = - 15/15v, r g = --- w tbd ns 1) values also influenced by parasitic l - and c - in measurement and package.
igc18 t120 t6 l edited by in fineon technologies , aim pmd d cid cls , l763 3 c , edit ion 1 , 31 .1 0 .200 7 chip drawing
igc18 t120 t6 l edited by in fineon technologies , aim pmd d cid cls , l763 3 c , edit ion 1 , 31 .1 0 .200 7 fur ther electrical characteristics this chip data sheet refers to the device data sheet tbd description aql 0,65 for visual inspection according to failure catalog ue electrostatic discharge sensitive device according to mil - std 883 test - normen villach/pr ffeld published by infineon technologies ag 81726 munich, germany ? infineon technologies ag 2007 all rights reserved attention please! the information herein is given to describe certain components and shall not be considered as warranted charact eristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non - infringement, regarding circuits, descriptions and charts stated herein. infineon technologies i s an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies representatives world - wide (see ad dress list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life - su pport devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support device or system, or to affect the safety or effectiveness of that dev ice or system. life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. if they fail, it is reasonable to assume that the health of the user or other person s may be endangered.
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